For all your NSN 5962-01-226-2279 needs and more, look to Purchase NSN Parts and our unrivaled supply of quality-assured products. On this page, we have compiled a number of resources and offerings concerning NSN 5962-01-226-2279, allowing you to review associated information and peruse available stock. Currently, we have part numbers like 51-P08668T001, 04EM067-1, 911732-1, 725000-207, S82S09F, and others in stock, where clicking on the “RFQ” button next to any will bring you to a Request for Quote (RFQ) form. You are also encouraged to take a look at our list of relevant components for NSN 5962-01-226-2279, where you can easily find similar options for your consideration.
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| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-226-2279 (012262279) |
| NCB Code | USA (01) |
| Manufacturer | Motorola Inc, Raytheon Company, Philips Semiconductors Ltd, Edo Corp, General Dynamics Advanced, Fairchild Semiconductor Corp, Target Corporation, Rochester Electronics Llc, Fairchild Camera And Instrument Corp |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 51-P08668T001 | motorola inc | microcircuit memory | 94990 | RFQ |
| 04EM067-1 | raytheon company | microcircuit memory | 24587 | RFQ |
| 911732-1 | raytheon company | microcircuit memory | 3b150 | RFQ |
| 725000-207 | raytheon company | microcircuit memory | 05869 | RFQ |
| S82S09F | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 93419DM0B | motorola inc | microcircuit memory | 94990 | RFQ |
| RB82S091I883B | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 435209-1 | edo corp | microcircuit memory | 00752 | RFQ |
| 15-812641-2 | general dynamics advanced | microcircuit memory | 07397 | RFQ |
| G279637-103 | raytheon company | microcircuit memory | 49956 | RFQ |
| CC1035F | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 759856 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 93419DM-883B | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| 1049799-1 | raytheon company | microcircuit memory | 49956 | RFQ |
| 759856 | raytheon company | microcircuit memory | 3b150 | RFQ |
| RB82S09I 883B | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 411778 | target corporation | microcircuit memory | 20284 | RFQ |
| 93419DM B | rochester electronics llc | microcircuit memory | 3v146 | RFQ |
| 725004-154 | raytheon company | microcircuit memory | 05869 | RFQ |
| 82S09 BXA | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 93419DC | fairchild camera and instrument corp | microcircuit memory | 34148 | RFQ |
| 759856 | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| 93419DM | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| N82S09F883B | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| 104756-1 | edo corp | microcircuit memory | 9y580 | RFQ |
| S82S09I 883B | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| QB93419DM | fairchild semiconductor corp | microcircuit memory | 07263 | RFQ |
| S82S09BXX | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| CC1944 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| RB82S09I | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1000.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | AN/BPS14TO15E |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND W/ENABLE AND MONOLITHIC AND BURN IN |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| Relevant Components for NSN - 5962-01-226-2279, 5962012262279 | ||||
| 5935-01-103-0885 (5935011030885) | 5910-01-016-0122 (5910010160122) | 5950-00-903-7718 (5950009037718) | 5935-01-331-1023 (5935013311023) | |
| 5905-00-850-0328 (5905008500328) | 5935-01-255-6372 (5935012556372) | 5975-01-616-3673 (5975016163673) | 5995-01-524-3953 (5995015243953) | |
| 5945-01-550-4051 (5945015504051) | 5945-01-516-3085 (5945015163085) | 5905-00-483-0570 (5905004830570) | 5960-00-392-2945 (5960003922945) | |
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